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PD - 94428
AUTOMOTIVE MOSFET
Typical Applications

IRF2805S IRF2805L
HEXFET(R) Power MOSFET
D
Climate Control ABS Electronic Braking Windshield Wipers Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
Features

VDSS = 55V
G S
RDS(on) = 4.7m ID = 135AV
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D2Pak IRF2805S
TO-262 IRF2805L
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (6 sigma) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Single Pulse Avalanche Energy Tested ValueX Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
135V 96V 700 200 1.3 20 380 1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient(PCB Mounted, steady state)**
Typ.
--- ---
Max.
0.75 40
Units
C/W
HEXFET(R) is a registered trademark of International Rectifier.
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1
06/10/02
IRF2805S/IRF2805L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance U Min. 55 --- --- 2.0 91 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.06 3.9 --- --- --- --- --- --- 150 38 52 14 120 68 110 4.5 7.5 5110 1190 210 6470 860 1600 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 4.7 m VGS = 10V, ID = 104A T 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 104A 20 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 230 ID = 104A 57 nC VDS = 44V 78 VGS = 10VT --- VDD = 28V --- ID = 104A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 44V, = 1.0MHz --- VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton Notes: Q Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.08mH RG = 25, IAS = 104A. (See Figure 12). S ISD 104A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%.
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 175V showing the A G integral reverse --- --- 700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0VT --- 80 120 ns TJ = 25C, IF = 104A --- 290 430 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS . V Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. W Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. X This value determined from sample failure population. 100% tested to this value in production.
2
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IRF2805S/IRF2805L
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
ID , Drain-to-Source Current (A)
100
4.5V
ID , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 10 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
T J = 25C
I D = 175A
A)
2.5
ID , Drain-to-Source Current
T J = 175C
RDS(on) , Drain-to-Source On Resistance
2.0
100
(Normalized)
1.5
1.0
10 4.0 5.0 6.0
VDS = 25V 20s PULSE WIDTH
7.0 8.0 9.0 10.0
0.5
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF2805S/IRF2805L
10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd =C +C ds gd
20 ID = 104A
VGS , Gate-to-Source Voltage (V)
VDS = 44V VDS= 28V
8000
16
C, Capacitance (pF)
6000
12
Ciss
4000
8
2000
4
Coss
0 1 10
Crss
100
0 0 40 80 120 160 200 240 Q G Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
10000 OPERATION IN THIS AREA LIMITED BY RDS (on)
ISD, Reverse Drain Current (A)
T J = 175C 100.0
ID , Drain-to-Source Current (A)
1000
10.0
100
100sec 1msec
1.0
T J = 25C
10 Tc = 25C Tj = 175C Single Pulse 1 10 10msec
0.1 0.2 0.4 0.6 0.8 1.0 1.2
VGS = 0V 1.4 1.6 1.8
1
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF2805S/IRF2805L
140
LIMITED BY PACKAGE
120
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
100 80 60 40 20 0 25 50 75 100 125 150 175
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2805S/IRF2805L
1 5V
800
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
D R IV E R
600
ID 42.5A 73.5A BOTTOM 104A TOP
RG
VV 2 0GS
D .U .T IA S tp 0 .0 1
+ - VD D
A
400
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
-VGS(th) Gate threshold Voltage (V)
4.0
ID = 250A
3.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
2.0
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
1.0 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
6
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IRF2805S/IRF2805L
10000
1000
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
Avalanche Current (A)
100
0.01 0.05
10
0.10
1
0.1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
400
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 104A
300
200
100
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRF2805S/IRF2805L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
S
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
R
-
T
+
Q
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs
8
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IRF2805S/IRF2805L
D2Pak Package Outline
D2Pak Part Marking Information
T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
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9
IRF2805S/IRF2805L
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S E MBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEE K 19 LINE C
10
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IRF2805S/IRF2805L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.0 1 4 5) 0.3 4 2 (.0 1 3 5)
F E E D D IR E C TIO N
1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
15 .4 2 (.6 0 9 ) 15 .2 2 (.6 0 1 )
24 .3 0 (.9 5 7) 23 .9 0 (.9 4 1)
TR L
1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F EE D D IR E C T IO N
1 3.50 (.53 2 ) 1 2.80 (.50 4 )
2 7.4 0 (1.0 79 ) 2 3.9 0 (.94 1) 4
33 0 .0 0 (14 .1 7 3) M A X.
60 .0 0 (2 .3 6 2) MIN .
NO TES : 1. C O M F O RM S T O E IA -4 1 8. 2. C O NT R O L LING DIM E NS IO N : M IL LIM E T E R. 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN CL UD E S F L A NG E DIS T O RT IO N @ O UT E R E D G E.
3 0.40 (1 .1 97 ) M AX. 26 .40 (1 .0 3 9 ) 24 .40 (.96 1 ) 3
4
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/02
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